SSM3J35MFV,L3F

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 100MA VESM

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 100MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J35MFV,L3F

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	12.2 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM3J35CTC,L3F	1.4 Ohm	500 mW	1.2 V 4.5 V	P-Channel	1 V	250 mA	10 V	150 °C	SC-101 SOT-883	Surface Mount	20 V	42 pF	CST3C	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage SSM3J35MFV,L3F	8 Ohm	150 mW		P-Channel		100 mA		150 °C	SOT-723	Surface Mount	20 V		VESM	MOSFET (Metal Oxide)	12.2 pF

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General part information

P-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount VESM

Technical documentation and resources