MOSFET P-CH 20V 250MA CST3C
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.4 Ohm | 500 mW | 1.2 V 4.5 V | P-Channel | 1 V | 250 mA | 10 V | 150 °C | SC-101 SOT-883 | Surface Mount | 20 V | 42 pF | CST3C | MOSFET (Metal Oxide) | |
Toshiba Semiconductor and Storage | 8 Ohm | 150 mW | P-Channel | 100 mA | 150 °C | SOT-723 | Surface Mount | 20 V | VESM | MOSFET (Metal Oxide) | 12.2 pF |