DMP25H18DLFDE-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP25H18DLFDE-13

Current - Continuous Drain (Id) @ 25°C	260 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	3.5 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	81 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUDFN
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs [Max]	14 Ohm
Supplier Device Package	U-DFN2020-6 (Type E)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40 V
Vgs(th) (Max) @ Id [Max]	2.5 V

P-Channel Enhancement Mode MOSFET

Part	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Technology
Diodes Inc DMP25H18DLFDE-7	Surface Mount	6-PowerUDFN	14 Ohm	81 pF	U-DFN2020-6 (Type E)	2.8 nC	260 mA	250 V	600 mW	P-Channel	-55 °C	150 °C	40 V	3.5 V 10 V	2.5 V	MOSFET (Metal Oxide)
Diodes Inc DMP25H18DLFDE-13	Surface Mount	6-PowerUDFN	14 Ohm	81 pF	U-DFN2020-6 (Type E)	2.8 nC	260 mA	250 V	600 mW	P-Channel	-55 °C	150 °C	40 V	3.5 V 10 V	2.5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	10000	$ 0.53

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources