P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 6-PowerUDFN | 14 Ohm | 81 pF | U-DFN2020-6 (Type E) | 2.8 nC | 260 mA | 250 V | 600 mW | P-Channel | -55 °C | 150 °C | 40 V | 3.5 V 10 V | 2.5 V | MOSFET (Metal Oxide) |
Diodes Inc | Surface Mount | 6-PowerUDFN | 14 Ohm | 81 pF | U-DFN2020-6 (Type E) | 2.8 nC | 260 mA | 250 V | 600 mW | P-Channel | -55 °C | 150 °C | 40 V | 3.5 V 10 V | 2.5 V | MOSFET (Metal Oxide) |