SSM3K309T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K309T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1020 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

Part	Operating Temperature	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3K309T(TE85L,F)	150 °C	12 V	MOSFET (Metal Oxide)	TSM	1020 pF	4.7 A	N-Channel	1.8 V 4 V	31 mOhm	SC-59 SOT-23-3 TO-236-3	20 V	Surface Mount	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 4.7A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources

No documents available