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MOSFET N-CH 20V 4.7A TSM
| Part | Operating Temperature | Vgs (Max) | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 12 V | MOSFET (Metal Oxide) | TSM | 1020 pF | 4.7 A | N-Channel | 1.8 V 4 V | 31 mOhm | SC-59 SOT-23-3 TO-236-3 | 20 V | Surface Mount | 700 mW |