IRF5802TRPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 1200 MOHM;

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IRF5802TRPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 1200 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF5802TRPBF

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	88 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	Micro6™(TSOP-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IRF5802 Series

Part	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	FET Type	Supplier Device Package
Infineon Technologies IRF5802TRPBF	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	-55 °C	150 °C	88 pF	150 V	10 V	1.2 Ohm	5.5 V	30 V	Surface Mount	6.8 nC	900 mA	2 W	N-Channel	Micro6™(TSOP-6)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.84
		10	$ 0.52
		100	$ 0.34
		500	$ 0.26
		1000	$ 0.23
	Digi-Reel®	1	$ 0.84
		10	$ 0.52
		100	$ 0.34
		500	$ 0.26
		1000	$ 0.23
	Tape & Reel (TR)	3000	$ 0.20
		6000	$ 0.19
		9000	$ 0.18
		15000	$ 0.17
		21000	$ 0.16

Description

General part information

IRF5802 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources