IR MOSFET™ N-CHANNEL SMALL POWER ; TSOP-6 PACKAGE; 1200 MOHM;
| Part | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 88 pF | 150 V | 10 V | 1.2 Ohm | 5.5 V | 30 V | Surface Mount | 6.8 nC | 900 mA | 2 W | N-Channel | Micro6™(TSOP-6) |