Zenode.ai Logo
Beta
K
STH60N099DM9-2AG - TO-263 (D2PAK)

STH60N099DM9-2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 76 MOHM TYP., 27 A MDMESH DM9 POWER MOSFET IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsUM1575+16
STH60N099DM9-2AG - TO-263 (D2PAK)

STH60N099DM9-2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 76 MOHM TYP., 27 A MDMESH DM9 POWER MOSFET IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

DocumentsUM1575+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH60N099DM9-2AG
Current - Continuous Drain (Id) @ 25°C27 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Input Capacitance (Ciss) (Max) @ Vds2140 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]179 W
Rds On (Max) @ Id, Vgs [Max]99 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.09
10$ 4.27
100$ 3.45
500$ 3.07
Digi-Reel® 1$ 5.09
10$ 4.27
100$ 3.45
500$ 3.07
Tape & Reel (TR) 1000$ 2.63
2000$ 2.48
NewarkEach (Supplied on Cut Tape) 1$ 5.94
10$ 4.21
25$ 3.87
50$ 3.53
100$ 3.19
250$ 3.08
500$ 2.89
1000$ 2.82

Description

General part information

STH60N099DM9-2AG Series

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.