STH60N099DM9-2AG Series

Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

Catalog

Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology
STMicroelectronics STH60N099DM9-2AG	-55 °C	150 °C	4.5 V	N-Channel	TO-263 (D2PAK)	10 V	2140 pF	Surface Mount	30 V	99 mOhm	44 nC	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	27 A	179 W	MOSFET (Metal Oxide)

Catalog

Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.