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DMP3045LFVW-13 - Package Image for PowerDI3333-8

DMP3045LFVW-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 19.9A I(D), 30V, 0.042OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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DMP3045LFVW-13 - Package Image for PowerDI3333-8

DMP3045LFVW-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 19.9A I(D), 30V, 0.042OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3045LFVW-13
Current - Continuous Drain (Id) @ 25°C5.7 A, 19.9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13.6 nC
Input Capacitance (Ciss) (Max) @ Vds782 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]900 mW
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14

Description

General part information

DMP3045LFVW Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.