DMP3045LFVW Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	Package / Case	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Diodes Inc DMP3045LVT-7	SOT-23-6 Thin TSOT-23-6	P-Channel	Surface Mount	42 mOhm	14.3 nC	20 V	30 V	5.4 A	MOSFET (Metal Oxide)	2.1 V	4.5 V 10 V	-55 °C	150 °C	749 pF	1.2 W
Diodes Inc DMP3045LFVW-13	8-PowerVDFN	P-Channel	Surface Mount Wettable Flank	42 mOhm		20 V	30 V	5.7 A 19.9 A	MOSFET (Metal Oxide)	2.1 V	4.5 V 10 V	-55 °C	150 °C	782 pF		900 mW	13.6 nC	PowerDI3333-8 (SWP) Type UX

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(on) – Ensures On-State Losses Are Minimized

• Small Form Factor Thermally Efficient Package Enables HigherDensity End Products

• Occupies just 33% of The Board Area Occupied by SO-8 EnablingSmaller End Product

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.