FF200R17KE3S4HOSA1

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Infineon Technologies

IGBT MODULE VCES 1200V 200A

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Infineon Technologies

IGBT MODULE VCES 1200V 200A

Technical Specifications

Parameters and characteristics for this part

Specification	FF200R17KE3S4HOSA1

Configuration	Half Bridge Inverter
Current - Collector (Ic) (Max) [Max]	310 A
Current - Collector Cutoff (Max) [Max]	3 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	18 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	1250 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Package / Case	Power - Max [Max]	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Mounting Type	IGBT Type	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	Input
Infineon Technologies FF200R17KE3S4HOSA1	Module	1250 W	Half Bridge Inverter	Module	-40 °C	125 ¯C	3 mA		1700 V	310 A	Chassis Mount	Trench Field Stop	2.45 V	18 nF	Standard
Infineon Technologies FF200R17KE4HOSA1	Module	1250 W	2 Independent	Module			1 mA		1700 V	310 A	Chassis Mount	Trench Field Stop	2.3 V	18 nF	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Trench Field Stop Half Bridge Inverter 1700 V 310 A 1250 W Chassis Mount Module

Technical documentation and resources