FF200R17KE4HOSA1

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Infineon Technologies

THE FF200R17KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 200 A.

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Infineon Technologies

THE FF200R17KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 200 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FF200R17KE4HOSA1

Configuration	2 Independent
Current - Collector (Ic) (Max) [Max]	310 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	18 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Package / Case	Module
Power - Max [Max]	1250 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Package / Case	Power - Max [Max]	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Mounting Type	IGBT Type	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	Input
Infineon Technologies FF200R17KE3S4HOSA1	Module	1250 W	Half Bridge Inverter	Module	-40 °C	125 ¯C	3 mA		1700 V	310 A	Chassis Mount	Trench Field Stop	2.45 V	18 nF	Standard
Infineon Technologies FF200R17KE4HOSA1	Module	1250 W	2 Independent	Module			1 mA		1700 V	310 A	Chassis Mount	Trench Field Stop	2.3 V	18 nF	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 110.00
Digikey	Tray	1	$ 114.18
		10	$ 96.15
Newark	Each	1	$ 115.33
		5	$ 110.23
		10	$ 105.13

General part information

62 mm1700 V, 200 A dualIGBT modulewith fast TRENCHSTOP™ IGBT4 and emitter controlled 4 diode.

Technical documentation and resources