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STB33N65M2 - D2Pak

STB33N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.117 OHM TYP., 24 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet+25
STB33N65M2 - D2Pak

STB33N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.117 OHM TYP., 24 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB33N65M2
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]41.5 nC
Input Capacitance (Ciss) (Max) @ Vds1790 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs140 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.97
10$ 3.33
100$ 2.70
500$ 2.40
Digi-Reel® 1$ 3.97
10$ 3.33
100$ 2.70
500$ 2.40
Tape & Reel (TR) 1000$ 2.05
2000$ 1.93
5000$ 1.85

Description

General part information

STB33N65M2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.