STB33N65M2 Series

N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package

Catalog

N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB33N65M2	140 mOhm	Surface Mount	1790 pF	N-Channel	TO-263 (D2PAK)	150 °C	10 V	25 V	41.5 nC	24 A	MOSFET (Metal Oxide)	190 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	4 V
STMicroelectronics STB33N60M6	125 mOhm	Surface Mount	1515 pF	N-Channel	TO-263 (D2PAK)		10 V	25 V		25 A	MOSFET (Metal Oxide)	190 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4.75 V	-55 °C	150 °C	33.4 nC

Catalog

N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.