SUM09N20-270-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 9A TO263

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 9A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM09N20-270-E3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	60 W, 3.75 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SUM09N20-270-E3	6 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	3.75 W 60 W	9 A	200 V	20 V	4 V	270 mOhm	580 pF	N-Channel	17 nC	TO-263 (D2PAK)	Surface Mount	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 9A (Tc) 3.75W (Ta), 60W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available