Beta
⌘K
MOSFET N-CH 200V 9A TO263
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 6 V 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 3.75 W 60 W | 9 A | 200 V | 20 V | 4 V | 270 mOhm | 580 pF | N-Channel | 17 nC | TO-263 (D2PAK) | Surface Mount | -55 °C | 175 ░C |