IXFT320N10T2

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IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 320A; 1000W; TO268; 98NS

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Active

IXYS

TRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 320A; 1000W; TO268; 98NS

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT320N10T2

Current - Continuous Drain (Id) @ 25°C	320 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	430 nC
Input Capacitance (Ciss) (Max) @ Vds	26000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFT320N10T2	1000 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	320 A	TO-268AA	10 V	MOSFET (Metal Oxide)	100 V	26000 pF	Surface Mount	4 V	430 nC	20 V	3.5 mOhm	N-Channel	-55 °C	175 ░C

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General part information

N-Channel 100 V 320A (Tc) 1000W (Tc) Surface Mount TO-268AA

Technical documentation and resources