TRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 320A; 1000W; TO268; 98NS
| Part | Power Dissipation (Max) [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 1000 W | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 320 A | TO-268AA | 10 V | MOSFET (Metal Oxide) | 100 V | 26000 pF | Surface Mount | 4 V | 430 nC | 20 V | 3.5 mOhm | N-Channel | -55 °C | 175 ░C |