Specification	SSM3J56ACT,L3F

Current - Continuous Drain (Id) (Ta)	1.4 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	1.6 nC
Input Capacitance (Ciss) (Max)	100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-101, SOT-883
Package Name	CST3
Power Dissipation (Max)	500 mW
Rds On (Max)	390 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SSM3J56 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)

Part	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max)	Package / Case	Package Name	FET Type	Technology	Power Dissipation (Max)	Operating Temperature	Vgs(th) (Max)	Gate Charge (Max)
Toshiba Semiconductor and Storage SSM3J56MFV,L3F	Surface Mount	100 pF	800 mA	20 V	8 V	390 mOhm	SOT-723	VESM	P-Channel	MOSFET (Metal Oxide)	150 mW	150 °C
Toshiba Semiconductor and Storage SSM3J56ACT,L3F	Surface Mount	100 pF	1.4 A	20 V	8 V	390 mOhm	SC-101 SOT-883	CST3	P-Channel	MOSFET (Metal Oxide)	500 mW	150 °C	1 V	1.6 nC

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