MOSFET P-CH 20V 800MA VESM
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Package / Case | Operating Temperature | Power Dissipation (Max) [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.2 V 4.5 V | 8 V | MOSFET (Metal Oxide) | SOT-723 | 150 °C | 150 mW | P-Channel | 100 pF | VESM | 20 V | 390 mOhm | Surface Mount | 800 mA | ||
Toshiba Semiconductor and Storage | 1.2 V 4.5 V | 8 V | MOSFET (Metal Oxide) | SC-101 SOT-883 | 150 °C | 500 mW | P-Channel | 100 pF | CST3 | 20 V | 390 mOhm | Surface Mount | 1.4 A | 1 V | 1.6 nC |