DMN3008SCP10-7
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN3008SCP10-7
ActiveDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3008SCP10-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 31.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1476 pF |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 2.7 W |
| Rds On (Max) @ Id, Vgs | 7.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.42 | |
| 6000 | $ 0.39 | |||
| 9000 | $ 0.39 | |||
Description
General part information
DMN3008SCP10 Series
This new generation MOSFET has been designed to minimize the on-state resistance (RSS(ON)) with a 3.37mm x 1.47mm x 0.2mm size and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources