DMN3008SCP10 Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type
Diodes Inc DMN3008SCP10-7	2.3 V	20 V	4.5 V 10 V	7.8 mOhm	2.7 W	MOSFET (Metal Oxide)	-55 °C	150 °C	1476 pF	31.3 nC	30 V	14.6 A	N-Channel

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Built-in G-S Protection Diode Against ESD 2kV HBM

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RSS(ON)) with a 3.37mm x 1.47mm x 0.2mm size and yet maintain superior switching performance, making it ideal for high efficiency power management applications.