SPB47N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 47A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 47A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB47N10

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	175 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Infineon Technologies SPB47N10	MOSFET (Metal Oxide)	20 V	105 nC	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	N-Channel	2500 pF	-55 °C	175 ░C	PG-TO263-3-2	33 mOhm	175 W	47 A	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 47A (Tc) 175W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources