MOSFET N-CH 100V 47A TO263-3
| Part | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 20 V | 105 nC | Surface Mount | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | N-Channel | 2500 pF | -55 °C | 175 ░C | PG-TO263-3-2 | 33 mOhm | 175 W | 47 A | 100 V |