IPP60R120C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 120 MOHM; HIGHEST PERFORMANCE

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IPP60R120C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 120 MOHM; HIGHEST PERFORMANCE

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R120C7XKSA1

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP60R120 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs
Infineon Technologies IPP60R120P7XKSA1	1544 pF	N-Channel	Through Hole	MOSFET (Metal Oxide)	10 V	PG-TO220-3	20 V	600 V	36 nC	26 A	4 V	120 mOhm	95 W	-55 °C	150 °C	TO-220-3
Infineon Technologies IPP60R120C7XKSA1	1500 pF	N-Channel	Through Hole	MOSFET (Metal Oxide)	10 V	PG-TO220-3	20 V	600 V	34 nC	19 A	4 V		92 W	-55 °C	150 °C	TO-220-3	120 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.74
		10	$ 3.15
		100	$ 2.24
		500	$ 1.85
		1000	$ 1.76
Newark	Each	1	$ 5.09
		10	$ 4.01
		25	$ 3.33
		50	$ 3.22
		100	$ 3.11
		250	$ 3.10
		500	$ 2.70

Description

General part information

IPP60R120 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet