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IPP60R120P7XKSA1 - ONSEMI ISL9V3040P3

IPP60R120P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 120 MOHM; PRICE/PERFORMANCE

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IPP60R120P7XKSA1 - ONSEMI ISL9V3040P3

IPP60R120P7XKSA1

Active
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 120 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R120P7XKSA1
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1544 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]95 W
Rds On (Max) @ Id, Vgs [Max]120 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.99
10$ 2.62
100$ 1.85
500$ 1.51
1000$ 1.41
2000$ 1.39
NewarkEach 1$ 3.39
10$ 2.48
100$ 2.00
500$ 1.78
1000$ 1.52
2500$ 1.44

Description

General part information

IPP60R120 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources