STGWA25S120DF3

Obsolete

STMicroelectronics

TRANSISTOR: IGBT; 1.2KV; 25A; 375W; TO247-3

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STGWA25S120DF3

Obsolete

STMicroelectronics

TRANSISTOR: IGBT; 1.2KV; 25A; 375W; TO247-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA25S120DF3

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	80 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	265 ns
Supplier Device Package	TO-247-3
Switching Energy	830 µJ, 2.37 mJ
Td (on/off) @ 25°C	147 ns, 31 ns
Test Condition	15 V, 600 V, 15 Ohm, 25 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGWA25H120DF2 Series

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Part	Supplier Device Package	Reverse Recovery Time (trr)	Power - Max [Max]	Package / Case	IGBT Type	Mounting Type	Gate Charge	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGWA25S120DF3	TO-247-3	265 ns	375 W	TO-247-3	Trench Field Stop	Through Hole	80 nC	15 V 15 Ohm 25 A 600 V	100 A	50 A	31 ns 147 ns	2.1 V	2.37 mJ 830 µJ	-55 °C	175 ░C	1200 V
STMicroelectronics STGWA25H120DF2	TO-247-3	303 ns	375 W	TO-247-3	Trench Field Stop	Through Hole	100 nC	10 Ohm 15 V 25 A 600 V	100 A	50 A	29 ns 130 ns	2.6 V	600 µJ 700 µJ	-55 °C	175 ░C	1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1	$ 7.73
		10	$ 7.55
		25	$ 6.76
		50	$ 6.56
		100	$ 6.38
		250	$ 6.18
TME	N/A	1	$ 12.33
		3	$ 11.10
		10	$ 10.27
		30	$ 9.80
		120	$ 8.81
		600	$ 8.51

Description

General part information

STGWA25H120DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources