STGWA25H120DF2 Series

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Catalog

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Part	Supplier Device Package	Reverse Recovery Time (trr)	Power - Max [Max]	Package / Case	IGBT Type	Mounting Type	Gate Charge	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGWA25S120DF3	TO-247-3	265 ns	375 W	TO-247-3	Trench Field Stop	Through Hole	80 nC	15 V 15 Ohm 25 A 600 V	100 A	50 A	31 ns 147 ns	2.1 V	2.37 mJ 830 µJ	-55 °C	175 ░C	1200 V
STMicroelectronics STGWA25H120DF2	TO-247-3	303 ns	375 W	TO-247-3	Trench Field Stop	Through Hole	100 nC	10 Ohm 15 V 25 A 600 V	100 A	50 A	29 ns 130 ns	2.6 V	600 µJ 700 µJ	-55 °C	175 ░C	1200 V

Catalog

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.