IRFB3206GPBF

NRND

Infineon Technologies

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 3 MOHM;

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NRND

Infineon Technologies

STRONGIRFET™ N-CHANNEL ; TO-220 PACKAGE; 3 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3206GPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id
Infineon Technologies IRFB3206PBF	10 V	-55 °C	175 ░C	170 nC	3 mOhm	N-Channel	TO-220-3	120 A	60 V	20 V	6540 pF	300 W	MOSFET (Metal Oxide)	TO-220AB	Through Hole	4 V
Infineon Technologies IRFB3206GPBF	10 V	-55 °C	175 ░C	170 nC	3 mOhm	N-Channel	TO-220-3	120 A	60 V	20 V	6540 pF	300 W	MOSFET (Metal Oxide)	TO-220AB	Through Hole	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly