IRFB3206PBF

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 210 A, 60 V, 3 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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IRFB3206PBF

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 210 A, 60 V, 3 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3206PBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFB3206 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id
Infineon Technologies IRFB3206PBF	10 V	-55 °C	175 ░C	170 nC	3 mOhm	N-Channel	TO-220-3	120 A	60 V	20 V	6540 pF	300 W	MOSFET (Metal Oxide)	TO-220AB	Through Hole	4 V
Infineon Technologies IRFB3206GPBF	10 V	-55 °C	175 ░C	170 nC	3 mOhm	N-Channel	TO-220-3	120 A	60 V	20 V	6540 pF	300 W	MOSFET (Metal Oxide)	TO-220AB	Through Hole	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.98
		10	$ 1.94
		100	$ 1.34
		500	$ 1.08
		1000	$ 1.00
		2000	$ 0.94
Newark	Each	1	$ 2.95
		10	$ 2.65
		100	$ 1.83
		500	$ 1.57
		1000	$ 1.48
		3000	$ 1.42

Description

General part information

IRFB3206 Series

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Documents

Technical documentation and resources