SPS02N60C3

Obsolete

Infineon Technologies

MOSFET N-CH 650V 1.8A TO251-3

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SPS02N60C3

Obsolete

Infineon Technologies

MOSFET N-CH 650V 1.8A TO251-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SPS02N60C3

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

SPS02N Series

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
Infineon Technologies SPS02N60C3	20 V	12.5 nC	10 V	-55 °C	150 °C	N-Channel	3.9 V	1.8 A	TO-251-3 Stub Leads IPAK	MOSFET (Metal Oxide)	200 pF	PG-TO251-3-11	25 W	650 V	Through Hole	3 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SPS02N Series

Replacement for 600V CoolMOS™ C3 isCoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.

Documents

Technical documentation and resources