Beta
⌘K
MOSFET N-CH 650V 1.8A TO251-3
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 12.5 nC | 10 V | -55 °C | 150 °C | N-Channel | 3.9 V | 1.8 A | TO-251-3 Stub Leads IPAK | MOSFET (Metal Oxide) | 200 pF | PG-TO251-3-11 | 25 W | 650 V | Through Hole | 3 Ohm |