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CMH04(TE12L,Q,M) - SOD 128

CMH04(TE12L,Q,M)

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Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A M-FLAT

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CMH04(TE12L,Q,M) - SOD 128

CMH04(TE12L,Q,M)

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A M-FLAT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCMH04(TE12L,Q,M)
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseSOD-128
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageM-FLAT (2.4x3.8)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.35
100$ 0.22
500$ 0.17
1000$ 0.15
Digi-Reel® 1$ 0.57
10$ 0.35
100$ 0.22
500$ 0.17
1000$ 0.15
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.10
75000$ 0.09

Description

General part information

CMH04 Series

Diode 200 V 1A Surface Mount M-FLAT (2.4x3.8)

Documents

Technical documentation and resources

No documents available