Beta
⌘K
DIODE GEN PURP 200V 1A M-FLAT
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Supplier Device Package | Current - Reverse Leakage @ Vr | Technology | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | -40 °C | 35 ns | M-FLAT (2.4x3.8) | 10 µA | Standard | 1 A | 200 V | Surface Mount | 200 mA 500 ns | SOD-128 |