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STGP20M65DF2

STGP20M65DF2

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS

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STGP20M65DF2

STGP20M65DF2

Active
STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS

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Description

General part information

STGP20 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP20M65DF2
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge63 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power - Max166 W
Reverse Recovery Time (trr)166 ns
Switching Energy (Off)560 µJ
Switching Energy (On)140 µJ
Td (off) @ 25°C108 ns
Td (on) @ 25°C26 ns
Test Condition Current20 A
Test Condition Resistance12 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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CAD

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Documents

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