Technical Specifications
Parameters and characteristics for this part
| Specification | STGP20M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 63 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 166 W |
| Reverse Recovery Time (trr) | 166 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 140 µJ, 560 µJ |
| Td (on/off) @ 25°C | 26 ns, 108 ns |
| Test Condition | 400 V, 20 A, 15 V, 12 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.23 | |
| 50 | $ 1.79 | |||
| 100 | $ 1.47 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.06 | |||
| 2000 | $ 1.00 | |||
| 5000 | $ 0.97 | |||
| 10000 | $ 0.93 | |||
Description
General part information
STGP20H65DFB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.