STGP20H65DFB2 Series

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

Catalog

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Switching Energy	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Gate Charge	Power - Max [Max]	Package / Case	Test Condition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGP20M65DF2	-55 °C	175 ░C	Trench Field Stop	140 µJ 560 µJ	TO-220	2 V	63 nC	166 W	TO-220-3	12 Ohm 15 V 20 A 400 V	40 A	Through Hole	80 A	26 ns 108 ns	166 ns	650 V
STMicroelectronics STGP20H65DFB2	-55 °C	175 ░C	Trench Field Stop	214 µJ 265 µJ	TO-220	2.1 V	56 nC	147 W	TO-220-3	10 Ohm 15 V 20 A 400 V	40 A	Through Hole	60 A	16 ns 78.8 ns	215 ns	650 V

Catalog

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.