AIDW10S65C5XKSA1
ObsoleteDIODE SIL CARB 650V 10A TO247-3
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AIDW10S65C5XKSA1
ObsoleteDIODE SIL CARB 650V 10A TO247-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | AIDW10S65C5XKSA1 |
|---|---|
| Capacitance @ Vr, F | 303 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Qualification | AEC-Q100/101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO247-3-41 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
AIDW10 Series
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. Product Validation"Qualified for Automotive Applications. Product Validation according to AEC-Q100/101"
Documents
Technical documentation and resources