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DIODE SIL CARB 650V 10A TO247-3
| Part | Qualification | Current - Average Rectified (Io) | Grade | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Technology | Supplier Device Package | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | AEC-Q100/101 | 10 A | Automotive | 60 µA | No Recovery Time | Through Hole | 1.7 V | 650 V | 303 pF | 0 ns | SiC (Silicon Carbide) Schottky | PG-TO247-3-41 | TO-247-3 | -40 °C | 175 ░C |