MSC180SMA120SA

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Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-263-7 7 TO-263 TUBE ROHS COMPLIANT: YES

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MSC180SMA120SA

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Microchip Technology

MOSFET SIC 1200 V 180 MOHM TO-263-7 7 TO-263 TUBE ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

MSC180SMA120 Series

MSC180SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	MSC180SMA120SA

Current - Continuous Drain (Id) (Tc)	21 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Input Capacitance (Ciss) (Max)	510 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK, TO-263-8, D2PAK-7
Power Dissipation (Max)	125 W
Rds On (Max)	225 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	3.26 V

MSC180SMA120 Series

1200V, 180 mOhm, Discrete mSiC™ MOSFET

Part	Vgs (Max) Negative	Vgs (Max) Positive	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Power Dissipation (Max)	Technology	FET Type	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Leads
Microchip Technology MSC180SMA120S	-10 V	23 V	D3PAK	20 V	225 mOhm	125 W	SiCFET (Silicon Carbide)	N-Channel	Surface Mount	21 A	3.26 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	34 nC	1200 V	-55 °C	175 °C	510 pF
Microchip Technology MSC180SMA120D/S
Microchip Technology MSC180SMA120B	-10 V	23 V	TO-247-3		225 mOhm	147 W	MOSFET (Metal Oxide)	N-Channel	Through Hole	21 A	4.5 V	TO-247-3	36 nC	1200 V	-55 °C	175 °C	530 pF	5 V	20 V
Microchip Technology MSC180SMA120SDT/R	-10 V	23 V	D2PAK TO-263-7		225 mOhm	146 W	SiCFET (Silicon Carbide)	N-Channel	Surface Mount	21 A	5 V		36 nC	1200 V	-55 °C	175 °C	481 pF	18 V	20 V	7 Leads
Microchip Technology MSC180SMA120SCT/RM			16-PSMT						Surface Mount			16-PowerSOP Module
Microchip Technology MSC180SMA120SA	-10 V	23 V	D2PAK D2PAK-7 TO-263-8	20 V	225 mOhm	125 W	SiCFET (Silicon Carbide)	N-Channel	Surface Mount	21 A	3.26 V		34 nC	1200 V	-55 °C	175 °C	510 pF			7 Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MSC180SMA120SC 1200V, 180 mOhm mSiC™ MOSFET PSMT Datasheet

MSC180SMA120B 1200V, 180 mOhm mSiC™ MOSFET TO-247 Datasheet

MSC180SMA120S 1200V, 180 mOhm mSiC™ MOSFET TO-268 Datasheet

MSC180SMA120B4N 1200V, 180 mOhm mSiC™ MOSFET TO-247-4 Notch Datasheet

MSC180SMA120SA 1200V, 180 mOhm mSiC™ MOSFET TO-263-7 Datasheet

MSC180SMA120SA | Datasheet