1200V, 180 mOhm, Discrete mSiC™ MOSFET
1200V, 180 mOhm, Discrete mSiC™ MOSFET
| Part | Vgs (Max) Negative | Vgs (Max) Positive | Package Name | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Power Dissipation (Max) | Technology | FET Type | Mounting Type | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Package / Case | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | -10 V | 23 V | D3PAK | 20 V | 225 mOhm | 125 W | SiCFET (Silicon Carbide) | N-Channel | Surface Mount | 21 A | 3.26 V | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 34 nC | 1200 V | -55 °C | 175 °C | 510 pF | |||
 Microchip Technology | ||||||||||||||||||||
 Microchip Technology | -10 V | 23 V | TO-247-3 | 225 mOhm | 147 W | MOSFET (Metal Oxide) | N-Channel | Through Hole | 21 A | 4.5 V | TO-247-3 | 36 nC | 1200 V | -55 °C | 175 °C | 530 pF | 5 V | 20 V | ||
 Microchip Technology | -10 V | 23 V | D2PAK TO-263-7 | 225 mOhm | 146 W | SiCFET (Silicon Carbide) | N-Channel | Surface Mount | 21 A | 5 V | 36 nC | 1200 V | -55 °C | 175 °C | 481 pF | 18 V | 20 V | 7 Leads | ||
 Microchip Technology | 16-PSMT | Surface Mount | 16-PowerSOP Module | |||||||||||||||||
Microchip Technology | -10 V | 23 V | D2PAK D2PAK-7 TO-263-8 | 20 V | 225 mOhm | 125 W | SiCFET (Silicon Carbide) | N-Channel | Surface Mount | 21 A | 3.26 V | 34 nC | 1200 V | -55 °C | 175 °C | 510 pF | 7 Leads |