SIGC39T60EX1SA3

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Infineon Technologies

TRANS IGBT CHIP N-CH 600V 3-PIN DIE WAFER

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Infineon Technologies

TRANS IGBT CHIP N-CH 600V 3-PIN DIE WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIGC39T60EX1SA3

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	225 A
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Die
Supplier Device Package	Die
Vce(on) (Max) @ Vge, Ic	1.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Package / Case	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]
Infineon Technologies SIGC39T60EX1SA3	Surface Mount	-40 C	175 °C	Trench Field Stop	Die	1.85 V	Die	600 V	225 A	75 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.

Technical documentation and resources