IPN80R2K0P7ATMA1

Active

Infineon Technologies

TRANS MOSFET N-CH 800V 3A 3-PIN(2+TAB) SOT-223 T/R

Search across all available documentation for this part.

Active

Infineon Technologies

TRANS MOSFET N-CH 800V 3A 3-PIN(2+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IPN80R2K0P7ATMA1

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	6.4 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPN80R2K4P7ATMA1	6.3 W	-55 °C	150 °C	PG-SOT223	2.4 Ohm	150 pF	10 V	MOSFET (Metal Oxide)	Surface Mount	20 V	800 V	7.5 nC	N-Channel	TO-261-4 TO-261AA	3.5 V	2.5 A
Infineon Technologies IPN80R2K0P7ATMA1	6.4 W	-55 °C	150 °C	PG-SOT223	2 Ohm	175 pF	10 V	MOSFET (Metal Oxide)	Surface Mount	20 V	800 V		N-Channel	TO-261-4 TO-261AA	3.5 V	3 A	9 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 3A (Tc) 6.4W (Tc) Surface Mount PG-SOT223

Technical documentation and resources