IPN80R2 Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; SOT-223 PACKAGE; 2400 MOHM; PRICE/PERFORMANCE

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPN80R2K4P7ATMA1	6.3 W	-55 °C	150 °C	PG-SOT223	2.4 Ohm	150 pF	10 V	MOSFET (Metal Oxide)	Surface Mount	20 V	800 V	7.5 nC	N-Channel	TO-261-4 TO-261AA	3.5 V	2.5 A
Infineon Technologies IPN80R2K0P7ATMA1	6.4 W	-55 °C	150 °C	PG-SOT223	2 Ohm	175 pF	10 V	MOSFET (Metal Oxide)	Surface Mount	20 V	800 V		N-Channel	TO-261-4 TO-261AA	3.5 V	3 A	9 nC