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IMBF170R650M1XTMA1 - PG-TO263-7

IMBF170R650M1XTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 7.4 A, 1.7 KV, 0.526 OHM, TO-263 (D2PAK)

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IMBF170R650M1XTMA1 - PG-TO263-7

IMBF170R650M1XTMA1

Active
Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 7.4 A, 1.7 KV, 0.526 OHM, TO-263 (D2PAK)

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Technical Specifications

Parameters and characteristics for this part

SpecificationIMBF170R650M1XTMA1
Current - Continuous Drain (Id) @ 25°C7.4 A
Drain to Source Voltage (Vdss)1700 V
Drive Voltage (Max Rds On, Min Rds On)15 V, 12 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC
Input Capacitance (Ciss) (Max) @ Vds422 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]88 W
Rds On (Max) @ Id, Vgs650 mOhm
Supplier Device PackagePG-TO263-7-13
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id5.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 5.34
10$ 3.70
50$ 3.55
100$ 2.84
200$ 2.83
DigikeyCut Tape (CT) 1$ 6.21
10$ 4.17
100$ 3.02
500$ 2.53
Digi-Reel® 1$ 6.21
10$ 4.17
100$ 3.02
500$ 2.53
Tape & Reel (TR) 1000$ 2.53
NewarkEach (Supplied on Cut Tape) 1$ 5.63
10$ 3.90
25$ 3.74
50$ 3.31
100$ 2.86
250$ 2.63
500$ 2.39
1000$ 2.36

Description

General part information

IMBF170 Series

CoolSiC™ 1700 V, 650 mΩSiC MOSFETin a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Documents

Technical documentation and resources