
IMBF170R450M1XTMA1
ActiveInfineon Technologies
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 9.8 A, 1.7 KV, 0.364 OHM, TO-263 (D2PAK)
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IMBF170R450M1XTMA1
ActiveInfineon Technologies
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 9.8 A, 1.7 KV, 0.364 OHM, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | IMBF170R450M1XTMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V, 12 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) | 107 W |
| Rds On (Max) @ Id, Vgs [Max] | 450 mOhm |
| Supplier Device Package | PG-TO263-7-13 |
| Vgs (Max) [Max] | 20 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IMBF170 Series
CoolSiC™ 1700 V, 450 mΩSiC MOSFETin a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Documents
Technical documentation and resources