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DMN24H11DSQ-7 - ONSEMI BAS40LT1G

DMN24H11DSQ-7

Active
Diodes Inc

TRANS MOSFET N-CH 240V 0.27A AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsRecommended Soldering TechniquesPackage PDF+2
DMN24H11DSQ-7 - ONSEMI BAS40LT1G

DMN24H11DSQ-7

Active
Diodes Inc

TRANS MOSFET N-CH 240V 0.27A AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

Deep-Dive with AI

DocumentsRecommended Soldering TechniquesPackage PDF+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN24H11DSQ-7
Current - Continuous Drain (Id) @ 25°C270 mA
Drain to Source Voltage (Vdss)240 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds76.8 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)750 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs11 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.14
6000$ 0.13
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14
NewarkEach (Supplied on Cut Tape) 1$ 0.57
10$ 0.43
25$ 0.38
50$ 0.33
100$ 0.29
250$ 0.25
500$ 0.22
1000$ 0.20

Description

General part information

DMN24H11DSQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.