DMN24H11DSQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Grade	Qualification	Rds On (Max) @ Id, Vgs
Diodes Inc DMN24H3D6S-7
Diodes Inc DMN24H3D5L-13	6.6 nC	Surface Mount	MOSFET (Metal Oxide)	240 V	3.3 V	10 V	N-Channel	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	3.5 Ohm	SOT-23-3	188 pF	760 mW	20 V	480 mA	2.5 V
Diodes Inc DMN24H11DSQ-7	3.7 nC	Surface Mount	MOSFET (Metal Oxide)	240 V	4.5 V 10 V		N-Channel	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3		SOT-23-3	76.8 pF	750 mW	20 V	270 mA	3 V	Automotive	AEC-Q101	11 Ohm

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.