DMT6015LFV-7

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Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI3333-8 T&R 2K

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DMT6015LFV-7

Active

Diodes Inc

MOSFET BVDSS: 41V~60V POWERDI3333-8 T&R 2K

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT6015LFV-7

Current - Continuous Drain (Id) @ 25°C	35 A, 9.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1103 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W, 30 W
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	PowerDI3333-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

DMT6015LFV Series

N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMT6015LFV-7	9.5 A 35 A	18.9 nC	MOSFET (Metal Oxide)	Surface Mount	60 V	16 mOhm	2.2 W 30 W	16 V	8-PowerVDFN	1103 pF	2.5 V	N-Channel	PowerDI3333-8 (Type UX)	-55 °C	150 °C	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.59
		10	$ 0.51
		100	$ 0.35
		500	$ 0.28
		1000	$ 0.22
	Digi-Reel®	1	$ 0.59
		10	$ 0.51
		100	$ 0.35
		500	$ 0.28
		1000	$ 0.22
	Tape & Reel (TR)	2000	$ 0.20
		6000	$ 0.19
		10000	$ 0.18
		50000	$ 0.17

Description

General part information

DMT6015LFV Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.